Aluminum (Oxy)nitride thin films grown by fs-PLD as electron emitters for thermionic applications
نویسندگان
چکیده
Thin films based on aluminum nitride were obtained by fs-laser assisted Pulsed Laser Deposition (fs-PLD) at room temperature tantalum substrates for studying the electron emission performance in range 700- 1600 °C, so to investigate possibility of their exploitation as thermionic cathodes. Results structural, chemical and morphological analyses show growth nanostructured thin with a significant oxygen contamination, forming mixture crystalline oxide well metallic inclusions. Despite considerable presence oxygen, developed cathodes demonstrate possess promising characteristics, work function 3.15 eV, valuable Richardson constant 20.25 A cm−2K−2, highly thermo- electronic stability up operating temperatures °C.
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ژورنال
عنوان ژورنال: Nucleation and Atmospheric Aerosols
سال: 2021
ISSN: ['0094-243X', '1551-7616', '1935-0465']
DOI: https://doi.org/10.1063/5.0068496